Classification of suppressor additives based on synergistic and antagonistic ensemble effects

• Published in: Electrochimica acta Vol. 56; no. 13; pp. 4724 - 4734
• Main Authors: Broekmann, P., Fluegel, A., Emnet, C., Arnold, M., Roeger-Goepfert, C., Wagner, A., Hai, N.T.M., Mayer, D.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.05.2011; Elsevier
• Subjects: Additive; Adsorption; Anions; Applied sciences; Barriers; Chemistry; Chlorides; Copper; Copper Damascene process; Electrochemistry; Electrodeposition; Electronics; Electroplating; Exact sciences and technology; General and physical chemistry; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Spark plasma sintering; STM; Study of interfaces; Suppressors; Surface chemistry; Additive; Copper Damascene process; Electroplating; STM; Thiol; Transition metal; Sulfonic acid; Damascene process; Surface structure; Ethylene oxide polymer; Scanning tunneling microscopy; Organic disulfide; Microelectronic fabrication; Interconnection; Morphology; Propylene oxide polymer; Classification; Electrodeposition; Copper; Electrochemical reaction
• ISSN: 0013-4686; 1873-3859
• DOI: 10.1016/j.electacta.2011.03.015

► Three fundamental types of suppressor additives for copper electroplating could be identified by means of potential transient measurements. ► These suppressor additives differ in their synergistic and antagonistic interplay with anions that are chemisorbed on the metallic copper surface during electrodeposition. ► In addition these suppressor chemistries reveal different barrier properties with respect to cupric ions and plating additives (Cl, SPS). Three fundamental types of suppressor additives for copper electroplating could be identified by means of potential transient measurements. These suppressor additives differ in their synergistic and antagonistic interplay with anions that are chemisorbed on the metallic copper surface during electrodeposition. In addition these suppressor chemistries reveal different barrier properties with respect to cupric ions and plating additives (Cl, SPS). While the type-I suppressor selectively forms efficient barriers for copper inter-diffusion on chloride-terminated electrode surfaces we identified a type-II suppressor that interacts non-selectively with any kind of anions chemisorbed on copper (chloride, sulfate, sulfonate). Type-I suppressors are vital for the superconformal copper growth mode in Damascene processing and show an antagonistic interaction with SPS (Bis-Sodium-Sulfopropyl-Disulfide) which involves the deactivation of this suppressor chemistry. This suppressor deactivation is rationalized in terms of compositional changes in the layer of the chemisorbed anions due to the competition of chloride and MPS (Mercaptopropane Sulfonic Acid) for adsorption sites on the metallic copper surface. MPS is the product of the dissociative SPS adsorption within the preexisting chloride matrix on the copper surface. The non-selectivity in the adsorption behavior of the type-II suppressor is rationalized in terms of anion/cation pairing effects of the poly-cationic suppressor and the anion-modified copper substrate. Atomic-scale insights into the competitive Cl/MPS adsorption are gained from in situ STM (Scanning Tunneling Microscopy) using single crystalline copper surfaces as model substrates. Type-III suppressors are a third class of suppressors. In case of type-I and type-II suppressor chemistries the resulting steady-state deposition conditions are completely independent on the particular succession of additive adsorption. In contrast to that a strong dependence of the suppressing capabilities on the sequence of additive adsorption (“first comes, first serves” principle) is observed for the type-III suppressor. This behavior is explained by a suppressor barrier that impedes not only the copper inter-diffusion but also the transport of other additives (e.g. SPS) to the copper surface.