Single-Crystal Organic Nanowires of Copper-Tetracyanoquinodimethane: Synthesis, Patterning, Characterization, and Device Applications

Current events: Nanowires of the organic semiconductor copper–tetracyanoquinodimethane (Cu–TCNQ) have been synthesized in a controlled manner and patterned on a variety of substrates by chemical vapor deposition. A cross‐point memory device based on a network of Cu–TCNQ nanowires (see picture) has b...

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Published inAngewandte Chemie International Edition Vol. 46; no. 15; pp. 2650 - 2654
Main Authors Xiao, Kai, Tao, Jing, Pan, Zhengwei, Puretzky, Alex A., Ivanov, Ilia N., Pennycook, Stephen J., Geohegan, David B.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 02.04.2007
WILEY‐VCH Verlag
Subjects
chemical vapor deposition
electron microscopy
molecular devices
nanostructures
organic semiconductors
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Summary:Current events: Nanowires of the organic semiconductor copper–tetracyanoquinodimethane (Cu–TCNQ) have been synthesized in a controlled manner and patterned on a variety of substrates by chemical vapor deposition. A cross‐point memory device based on a network of Cu–TCNQ nanowires (see picture) has been constructed that repeatedly switches electrically between two states with a conductivity difference of more than two orders of magnitude.
Bibliography:US Department of Energy
The authors gratefully acknowledge P. Fleming for technical assistance, and H. N. Lee for helpful discussions. We also thank Dr. Z. Zhou for writing the program for the write-read-erase cycle measurements. This research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at the Oak Ridge National Laboratory by the Division of Scientific User Facilities, US Department of Energy. HRTEM and SEAD analyses (J.T. and S.J.P., respectively) were funded by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, US Department of Energy under contract DE-AC05-00OR22725 with the Oak Ridge National Laboratory, managed and operated by UT-Battelle, LLC.
ArticleID:ANIE200604397
ark:/67375/WNG-C1SKF642-8
Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, US Department of Energy - No. DE-AC05-00OR22725
istex:153B3B8395F20CB9EAD28BED7D3F72F16EA33287
Oak Ridge National Laboratory
The authors gratefully acknowledge P. Fleming for technical assistance, and H. N. Lee for helpful discussions. We also thank Dr. Z. Zhou for writing the program for the write‐read‐erase cycle measurements. This research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at the Oak Ridge National Laboratory by the Division of Scientific User Facilities, US Department of Energy. HRTEM and SEAD analyses (J.T. and S.J.P., respectively) were funded by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, US Department of Energy under contract DE‐AC05‐00OR22725 with the Oak Ridge National Laboratory, managed and operated by UT‐Battelle, LLC.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:1433-7851
1521-3773
DOI:10.1002/anie.200604397