Macropore density as a function of HF-concentration and bias
Usually, n-macropore density was determined by SCR (space charge region) width. In this paper, under both constant-voltage and galvanostatic conditions, a markedly positive correlation between pore density and HF concentration was evidenced despite a fixed SCR width on low-doped n-Si; the phenomena...
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Published in | Electrochimica acta Vol. 53; no. 2; pp. 823 - 828 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Oxford
Elsevier Ltd
01.12.2007
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Usually, n-macropore density was determined by SCR (space charge region) width. In this paper, under both constant-voltage and galvanostatic conditions, a markedly positive correlation between pore density and HF concentration was evidenced despite a fixed SCR width on low-doped n-Si; the phenomena observed differ a bit from the results dependent on SCR effects. Based on breakdown mechanism and current-burst-model (CBM), an interpretation was given. Additionally, for a given electrolyte and illumination, the correlation between pore density and etching voltage was also found to be considerably positive: both penetrating and focusing power of field strength was supposed to be the underlying factors. The as-produced macropores could be probably significant due to their high density, fast etch-rate and good controllability. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0013-4686 1873-3859 |
DOI: | 10.1016/j.electacta.2007.07.065 |