Electrical characterization of CMOS transistors subject to externally applied mechanical stress
Hole and electron mobilities in CMOS structures are significantly influenced by a mechanical strain state. In the present work a new experimental device has been designed, able to apply a uniaxial in-plane strain along different crystallographic orientations. A hole mobility enhancement of +10% and...
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| Published in | Computational materials science Vol. 43; no. 4; pp. 951 - 956 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Amsterdam
Elsevier B.V
01.10.2008
Elsevier Science |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0927-0256 1879-0801 |
| DOI | 10.1016/j.commatsci.2008.02.024 |
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| Abstract | Hole and electron mobilities in CMOS structures are significantly influenced by a mechanical strain state. In the present work a new experimental device has been designed, able to apply a uniaxial in-plane strain along different crystallographic orientations. A hole mobility enhancement of +10% and an electron mobility decrease of −5% have been demonstrated with the application of a 0.05% compressive 〈110〉 strain; a hole mobility enhancement of +2% and an electron mobility decrease of −3% have been induced into the material with the application of a 0.05% compressive 〈100〉 strain. |
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| AbstractList | Hole and electron mobilities in CMOS structures are significantly influenced by a mechanical strain state. In the present work a new experimental device has been designed, able to apply a uniaxial in-plane strain along different crystallographic orientations. A hole mobility enhancement of +10% and an electron mobility decrease of -5% have been demonstrated with the application of a 0.05% compressive 1 1 0 strain; a hole mobility enhancement of +2% and an electron mobility decrease of -3% have been induced into the material with the application of a 0.05% compressive 1 0 0 strain. Hole and electron mobilities in CMOS structures are significantly influenced by a mechanical strain state. In the present work a new experimental device has been designed, able to apply a uniaxial in-plane strain along different crystallographic orientations. A hole mobility enhancement of +10% and an electron mobility decrease of −5% have been demonstrated with the application of a 0.05% compressive 〈110〉 strain; a hole mobility enhancement of +2% and an electron mobility decrease of −3% have been induced into the material with the application of a 0.05% compressive 〈100〉 strain. |
| Author | Carnevale, G. Bocciarelli, M. Cordano, D. |
| Author_xml | – sequence: 1 givenname: D. surname: Cordano fullname: Cordano, D. organization: Department of Electronics and Information, Technical University of Milan, Piazza L. da Vinci 32, 20133 Milan, Italy – sequence: 2 givenname: G. surname: Carnevale fullname: Carnevale, G. organization: ST Microelectronics, Via Olivetti 2, Agrate Brianza, Milan, Italy – sequence: 3 givenname: M. surname: Bocciarelli fullname: Bocciarelli, M. email: massimiliano.bocciarelli@polimi.it organization: Department of Structural Engineering, Technical University of Milan, Piazza L. da Vinci 32, 20133 Milan, Italy |
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| Keywords | CMOS transistors Strained silicon 73.40.Qv Electronic transport Crystal orientation Hole mobility Transistor Compressive stress Complementary MOS technology Plane strain Electron mobility Uniaxial strain Silicon |
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| Snippet | Hole and electron mobilities in CMOS structures are significantly influenced by a mechanical strain state. In the present work a new experimental device has... |
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| SubjectTerms | Applied sciences CMOS transistors Electronic transport Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Strained silicon Transistors |
| Title | Electrical characterization of CMOS transistors subject to externally applied mechanical stress |
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