Electrical characterization of CMOS transistors subject to externally applied mechanical stress

• Published in: Computational materials science Vol. 43; no. 4; pp. 951 - 956
• Main Authors: Cordano, D., Carnevale, G., Bocciarelli, M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2008; Elsevier Science
• Subjects: Applied sciences; CMOS transistors; Electronic transport; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Strained silicon; Transistors; CMOS transistors; Strained silicon; 73.40.Qv; Electronic transport; Crystal orientation; Hole mobility; Transistor; Compressive stress; Complementary MOS technology; Plane strain; Electron mobility; Uniaxial strain; Silicon
• ISSN: 0927-0256; 1879-0801
• DOI: 10.1016/j.commatsci.2008.02.024

Hole and electron mobilities in CMOS structures are significantly influenced by a mechanical strain state. In the present work a new experimental device has been designed, able to apply a uniaxial in-plane strain along different crystallographic orientations. A hole mobility enhancement of +10% and an electron mobility decrease of −5% have been demonstrated with the application of a 0.05% compressive 〈110〉 strain; a hole mobility enhancement of +2% and an electron mobility decrease of −3% have been induced into the material with the application of a 0.05% compressive 〈100〉 strain.