Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers

Shockley-type stacking faults expanded in 4H-SiC epilayers induced by ultraviolet illumination were investigated using a photoluminescence imaging method, a photoluminescence mapping method and X-ray topography. After ultraviolet illumination, more than 30 patterns of Shockley-type stacking faults w...

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Bibliographic Details
Published inPhilosophical magazine (Abingdon, England) Vol. 97; no. 30; pp. 2736 - 2752
Main Authors Iijima, Akifumi, Kamata, Isaho, Tsuchida, Hidekazu, Suda, Jun, Kimoto, Tsunenobu
Format Journal Article
LanguageEnglish
Published Taylor & Francis 23.10.2017
Subjects
crystal defects
dislocations
Silicon carbide (SiC)
stacking faults
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Summary:Shockley-type stacking faults expanded in 4H-SiC epilayers induced by ultraviolet illumination were investigated using a photoluminescence imaging method, a photoluminescence mapping method and X-ray topography. After ultraviolet illumination, more than 30 patterns of Shockley-type stacking faults which expanded from perfect basal plane dislocations were observed by photoluminescence imaging. The initial basal plane dislocations were crystallographically classified, and individual shapes of expanded Shockley-type stacking faults were predicted. The correspondence between the predicted shapes and observed ones was discussed.
ISSN:1478-6435
1478-6443
DOI:10.1080/14786435.2017.1350788