Oxide aperture scaling effect on high-speed (>16 GHz) vertical-cavity surface-emitting lasers performance

• Published in: Optics and laser technology Vol. 40; no. 2; pp. 401 - 404
• Main Author: AL-Omari, A.N.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.03.2008; Elsevier Science
• Subjects: Exact sciences and technology; Fundamental areas of phenomenology (including applications); Lasers; Optics; Physics; Semiconductor laser diodes; Semiconductor lasers; laser diodes; VCSEL modulation bandwidth; VCSEL resonance frequency; VCSEL resonance frequency; Semiconductor laser diodes; VCSEL modulation bandwidth; Performance evaluation; Oxides; Experimental study; Laser diodes; Vertical cavity laser; Manufacturing processes; Semiconductor lasers; Surface emitting lasers; High speed; Polyimides
• ISSN: 0030-3992; 1879-2545
• DOI: 10.1016/j.optlastec.2007.07.006

High-speed, oxide-confined, polyimide-planarized 850 nm vertical-cavity surface-emitting lasers (VCSELs) with oxide aperture diameters of 9, 10, 12, 15, 20, and 30 μm have been fabricated and characterized. For a 9 μm oxide aperture diameter, the lasers exhibit a resonance frequency, a 3-dB modulation frequency, and a modulation current efficiency factor (MCEF) up to 12.4, 16.5 GHz, and 10.9 GHz/mA 1/2, respectively, at only 7.9 kA/cm 2. Threshold voltage and current were 1.45 V and 0.7 mA, respectively. It is demonstrated that increasing the resonance frequency with bias does not guarantee a higher modulation bandwidth. The influence of oxide aperture scaling effect on VCSEL performance is presented.