Trench insulated gate bipolar transistors submitted to high temperature bias stress

• Published in: Microelectronics and reliability Vol. 45; no. 9; pp. 1728 - 1731
• Main Authors: Maïga, C.O., Toutah, H., Tala-Ighil, B., Boudart, B.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 01.09.2005; Elsevier
• Subjects: Applied sciences; Circuit properties; Electric, optical and optoelectronic circuits; Electronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Engineering Sciences; Exact sciences and technology; Other multijunction devices. Power transistors. Thyristors; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Switching, multiplexing, switched capacity circuits; Testing, measurement, noise and reliability; Thermal stress; Voltage threshold; Power converter; Trench technology; Insulated gate bipolar transistor; Electric stress; Switching; Power transistor; Database; Collector; Power device; Selector switch; Fault diagnostic
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2005.07.098

In this work we analyse the behavior of the Non Punch Through Trench Insulated Gate Bipolar Transistors submitted to High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) stresses. The electric stress has been accomplished during 1200 hours at 140 °C with 0.8 V CEmax Collector - Emitter bias (HTRB) and with V GE = −20 V or +20 V Gate Bias (HTGB). The results show the evolution of the static parameters as threshold voltage and on-state voltage drop and of switching parameters. The aim is to constitute a database as complete as possible for the analysis and diagnosis of failure causes related to the switching devices in power conversion systems.