Biaxial initial stress characterization of bilayer gold RF-switches

An analysis as been conducted to determine the biaxial initial stress state of gold bilayer switches. Results are shown that the sensitivity of the sacrificial photoresist layer to process parameters make the wafer curvature technique unreliable to determine the initial stress state of the evaporate...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 45; no. 9; pp. 1776 - 1781
Main Authors Yacine, K., Flourens, F., Bourrier, D., Salvagnac, L., Calmont, P., Lafontan, X., Duong, Q.-H., Bucaillot, L., Peyrou, D., Pons, P., Plana, R.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Oxford Elsevier Ltd 01.09.2005
Elsevier
Subjects
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Engineering Sciences
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switching, multiplexing, switched capacity circuits
Microelectronic fabrication
Analytical method
Selector switch
Photolithography
Wafer
Cantilever beam
Bilayers
Sacrificial layer
Photoresist
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Summary:An analysis as been conducted to determine the biaxial initial stress state of gold bilayer switches. Results are shown that the sensitivity of the sacrificial photoresist layer to process parameters make the wafer curvature technique unreliable to determine the initial stress state of the evaporated gold seed layer. An analytical method based on the cantilever deflection method is proposed to determine the biaxial stress state on this layer. Assumptions were validated numerically using FEM and cantilevers gold bilayer of various length were elaborated and characterized.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2005.07.093