Growth without Postannealing of Monoclinic VO2 Thin Film by Atomic Layer Deposition Using VCl4 as Precursor

Vanadium dioxide (VO2) is a multifunctional material with semiconductor-to-metal transition (SMT) property. Organic vanadium compounds are usually employed as ALD precursors to grow VO2 films. However, the as-deposited films are reported to have amorphous structure with no significant SMT property,...

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Bibliographic Details
Published inCoatings (Basel) Vol. 8; no. 12; p. 431
Main Authors Lee, Wen-Jen, Chang, Yong-Han
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.12.2018
Subjects
Atomic layer epitaxy
Chemical vapor deposition
Crystallization
Molecular beam epitaxy
Morphology
Phase transitions
Precursors
Process parameters
Substrates
Temperature dependence
Thin films
Vanadium compounds
Vanadium dioxide
Vanadium oxides
Japan
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Summary:Vanadium dioxide (VO2) is a multifunctional material with semiconductor-to-metal transition (SMT) property. Organic vanadium compounds are usually employed as ALD precursors to grow VO2 films. However, the as-deposited films are reported to have amorphous structure with no significant SMT property, therefore a postannealing process is necessary for converting the amorphous VO2 to crystalline VO2. In this study, an inorganic vanadium tetrachloride (VCl4) is used as an ALD precursor for the first time to grow VO2 films. The VO2 film is directly crystallized and grown on the substrate without any postannealing process. The VO2 film displays significant SMT behavior, which is verified by temperature-dependent Raman spectrometer and four-point-probing system. The results demonstrate that the VCl4 is suitably employed as a new ALD precursor to grow crystallized VO2 films. It can be reasonably imagined that the VCl4 can also be used to grow various directly crystallized vanadium oxides by controlling the ALD-process parameters.
ISSN:2079-6412
2079-6412
DOI:10.3390/coatings8120431