GaN planar Schottky barrier diode with cut-off frequency of 902 GHz

• Published in: Electronics letters Vol. 52; no. 16; pp. 1408 - 1410
• Main Authors: Liang, Shixiong, Fang, Yulong, Xing, Dong, Zhang, Zhirong, Wang, Junlong, Guo, Hongyu, Zhang, Lisen, Gu, Guodong, Feng, Zhihong
• Format: Journal Article
• Language: English
• Published: The Institution of Engineering and Technology 04.08.2016
• Subjects: air‐bridge structure; Barriers; Cut-off; Diodes; doping concentration; Electronics; epitaxial layer; Epitaxial layers; frequency 902 GHz; gallium compounds; Gallium nitrides; GaN; III‐V semiconductors; parasitic capacitance reduction; parasitic resistance reduction; planar SBD; planar Schottky barrier diode; sapphire; sapphire substrate; Schottky diodes; Semiconductor technology; size 2 mum; substrate thinning‐down technique; Substrates; wide band gap semiconductors; Schottky diodes; gallium compounds; substrate thinning-down technique; planar Schottky barrier diode; doping concentration; air-bridge structure; size 2 mum; frequency 902 GHz; epitaxial layer; sapphire substrate; planar SBD; GaN; parasitic resistance reduction; parasitic capacitance reduction; wide band gap semiconductors; III-V semiconductors; sapphire
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2016.1937

GaN planar Schottky barrier diode (SBD) with an n−/n+ structure was grown and fabricated on sapphire substrate. An n+ GaN epitaxial layer with doping concentration of 8 × 1018 cm−3 was employed to reduce the parasitic resistance. An air-bridge structure and 50 μm substrate thinning-down technique were adopted in order to reduce the parasitic capacitance. A record cut-off frequency (fc) of 902 GHz was achieved for GaN planar SBD with 2 μm anode diameter.