Low voltage field emission of single Cu nanowire in air with nanoscale gaps for vacuum electronics
Field emission applications to date including displays have featured electrode gaps in the micron scale or even larger. Devices such as vacuum field effect transistors demand smaller gaps for improved performance and continued scaling. The present work investigates nanoscale cathode–anode distances...
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Published in | Micro & nano letters Vol. 12; no. 11; pp. 897 - 900 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Stevenage
The Institution of Engineering and Technology
01.11.2017
John Wiley & Sons, Inc |
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Online Access | Get full text |
ISSN | 1750-0443 1750-0443 |
DOI | 10.1049/mnl.2017.0411 |
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Abstract | Field emission applications to date including displays have featured electrode gaps in the micron scale or even larger. Devices such as vacuum field effect transistors demand smaller gaps for improved performance and continued scaling. The present work investigates nanoscale cathode–anode distances and evaluated field emission characteristics using a single Cu emitter. The gap was systematically varied between 20 and 80 nm with the aid of focused ion beam etching. Field emission was achieved at bias voltages below 5 V under atmospheric conditions with a 20 nm gap between the cathode and anode. The turn-on voltage was 1.75 V and the maximum current reached 32.5 nA at 5 V. The emission current is dependent on the cathode–anode distance and decreases exponentially with increasing distance. The nanoscale gap allows lower drive voltages than in previous studies while providing large emission currents for a single emitter. |
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AbstractList | Field emission applications to date including displays have featured electrode gaps in the micron scale or even larger. Devices such as vacuum field effect transistors demand smaller gaps for improved performance and continued scaling. The present work investigates nanoscale cathode–anode distances and evaluated field emission characteristics using a single Cu emitter. The gap was systematically varied between 20 and 80 nm with the aid of focused ion beam etching. Field emission was achieved at bias voltages below 5 V under atmospheric conditions with a 20 nm gap between the cathode and anode. The turn-on voltage was 1.75 V and the maximum current reached 32.5 nA at 5 V. The emission current is dependent on the cathode–anode distance and decreases exponentially with increasing distance. The nanoscale gap allows lower drive voltages than in previous studies while providing large emission currents for a single emitter. Field emission applications to date including displays have featured electrode gaps in the micron scale or even larger. Devices such as vacuum field effect transistors demand smaller gaps for improved performance and continued scaling. The present work investigates nanoscale cathode–anode distances and evaluated field emission characteristics using a single Cu emitter. The gap was systematically varied between 20 and 80 nm with the aid of focused ion beam etching. Field emission was achieved at bias voltages below 5 V under atmospheric conditions with a 20 nm gap between the cathode and anode. The turn‐on voltage was 1.75 V and the maximum current reached 32.5 nA at 5 V. The emission current is dependent on the cathode–anode distance and decreases exponentially with increasing distance. The nanoscale gap allows lower drive voltages than in previous studies while providing large emission currents for a single emitter. |
Author | Yang, Yang Li, Tie Wang, Yuelin Liu, Meng |
Author_xml | – sequence: 1 givenname: Meng surname: Liu fullname: Liu, Meng organization: 3School of Information Science and Technology, University of ShanghaiTech, Shanghai 200120, People's Republic of China – sequence: 2 givenname: Yang surname: Yang fullname: Yang, Yang organization: 2School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China – sequence: 3 givenname: Tie surname: Li fullname: Li, Tie organization: 2School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China – sequence: 4 givenname: Yuelin surname: Wang fullname: Wang, Yuelin email: ylwang@mail.sim.ac.cn organization: 3School of Information Science and Technology, University of ShanghaiTech, Shanghai 200120, People's Republic of China |
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Keywords | nanoscale gaps cathodes single Cu emitter sputter etching low voltage field emission turn-on voltage field emission single Cu nanowire bias voltages focused ion beam technology vacuum electronics nanoscale cathode-anode distances focused ion beam etching Cu nanowires emission current copper |
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Lett. – volume: 107 start-page: 122108 year: 2015 article-title: Nanowire‐density‐dependent field emission of n‐type 3C‐SiC nanoarrays publication-title: Appl. Phys. Lett. – volume: 100 start-page: 213505 year: 2012 article-title: Vacuum nanoelectronics: back to the future? Gate insulated nanoscale vacuum channel transistor publication-title: Appl. Phys. Lett. – volume: 168 start-page: 37 year: 2003 end-page: 42 article-title: The field emission properties of silicon carbide whiskers grown by CVD publication-title: Surf. Coat. Technol. – volume: 111 start-page: 114502 year: 2012 article-title: Performance characteristics of nanocrystalline diamond vacuum field emission transistor array publication-title: J. Appl. Phys. – start-page: 172 year: 2017 end-page: 175 article-title: Nanoscale vacuum channel transistor – volume: 89 start-page: 197602 year: 2002 article-title: Field emission of individual carbon nanotubes in the scanning electron microscope publication-title: Phys. Rev. Lett. – volume: 105 start-page: 033110 year: 2014 article-title: Field emission properties from flexible field emitters using carbon nanotube film publication-title: Appl. Phys. Lett. – volume: 62 start-page: 4293 year: 2015 end-page: 4300 article-title: Dovetail tip: a new approach for low‐threshold vacuum nanoelectronics publication-title: IEEE Trans. Electron Devices – volume: 75 start-page: 2680 year: 1999 end-page: 2682 article-title: Electron emission from films of carbon nanotubes and ta‐C coated nanotubes publication-title: Appl. Phys. Lett. – volume: 24 start-page: 1081 year: 2006 end-page: 1087 article-title: Characterizing field emission from individual carbon nanotubes at small distances publication-title: J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. – volume: 7 start-page: 125 year: 2012 article-title: Paradox of low field enhancement factor for field emission nanodiodes in relation to quantum screening effects publication-title: Nanoscale Res. Lett. – volume: 87 start-page: 033703 year: 2016 article-title: Electron‐bombarded 〈110〉‐oriented tungsten tips for stable tunneling electron emission publication-title: Rev. Sci. Instrum. – volume: 134 start-page: 14283 year: 2012 article-title: Synthesis of ultralong copper nanowires for high‐performance transparent electrodes publication-title: J. Am. Chem. Soc. – volume: 105 start-page: 103107 year: 2014 article-title: Graphene field emission devices publication-title: Appl. Phys. Lett. – volume: 29 start-page: 1259 year: 2008 end-page: 1261 article-title: A monolithic nanodiamond lateral field emission vacuum transistor publication-title: IEEE Electron Device Lett. – volume: 61 start-page: 4186 year: 2014 end-page: 4191 article-title: A new slit‐type vacuum‐channel transistor publication-title: IEEE Trans. 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SubjectTerms | Anodes bias voltages Cathodes copper Emission analysis emission current Emitters Field effect transistors Field emission focused ion beam etching focused ion beam technology Ion beams Low voltage low voltage field emission nanoscale cathode‐anode distances nanoscale gaps Nanowires Semiconductor devices single Cu emitter single Cu nanowire Special Issue: Selected Papers from The 12th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2017) sputter etching turn‐on voltage vacuum electronics |
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Title | Low voltage field emission of single Cu nanowire in air with nanoscale gaps for vacuum electronics |
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