Low voltage field emission of single Cu nanowire in air with nanoscale gaps for vacuum electronics

Field emission applications to date including displays have featured electrode gaps in the micron scale or even larger. Devices such as vacuum field effect transistors demand smaller gaps for improved performance and continued scaling. The present work investigates nanoscale cathode–anode distances...

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Published inMicro & nano letters Vol. 12; no. 11; pp. 897 - 900
Main Authors Liu, Meng, Yang, Yang, Li, Tie, Wang, Yuelin
Format Journal Article
LanguageEnglish
Published Stevenage The Institution of Engineering and Technology 01.11.2017
John Wiley & Sons, Inc
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ISSN1750-0443
1750-0443
DOI10.1049/mnl.2017.0411

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Abstract Field emission applications to date including displays have featured electrode gaps in the micron scale or even larger. Devices such as vacuum field effect transistors demand smaller gaps for improved performance and continued scaling. The present work investigates nanoscale cathode–anode distances and evaluated field emission characteristics using a single Cu emitter. The gap was systematically varied between 20 and 80 nm with the aid of focused ion beam etching. Field emission was achieved at bias voltages below 5 V under atmospheric conditions with a 20 nm gap between the cathode and anode. The turn-on voltage was 1.75 V and the maximum current reached 32.5 nA at 5 V. The emission current is dependent on the cathode–anode distance and decreases exponentially with increasing distance. The nanoscale gap allows lower drive voltages than in previous studies while providing large emission currents for a single emitter.
AbstractList Field emission applications to date including displays have featured electrode gaps in the micron scale or even larger. Devices such as vacuum field effect transistors demand smaller gaps for improved performance and continued scaling. The present work investigates nanoscale cathode–anode distances and evaluated field emission characteristics using a single Cu emitter. The gap was systematically varied between 20 and 80 nm with the aid of focused ion beam etching. Field emission was achieved at bias voltages below 5 V under atmospheric conditions with a 20 nm gap between the cathode and anode. The turn-on voltage was 1.75 V and the maximum current reached 32.5 nA at 5 V. The emission current is dependent on the cathode–anode distance and decreases exponentially with increasing distance. The nanoscale gap allows lower drive voltages than in previous studies while providing large emission currents for a single emitter.
Field emission applications to date including displays have featured electrode gaps in the micron scale or even larger. Devices such as vacuum field effect transistors demand smaller gaps for improved performance and continued scaling. The present work investigates nanoscale cathode–anode distances and evaluated field emission characteristics using a single Cu emitter. The gap was systematically varied between 20 and 80 nm with the aid of focused ion beam etching. Field emission was achieved at bias voltages below 5 V under atmospheric conditions with a 20 nm gap between the cathode and anode. The turn‐on voltage was 1.75 V and the maximum current reached 32.5 nA at 5 V. The emission current is dependent on the cathode–anode distance and decreases exponentially with increasing distance. The nanoscale gap allows lower drive voltages than in previous studies while providing large emission currents for a single emitter.
Author Yang, Yang
Li, Tie
Wang, Yuelin
Liu, Meng
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Issue 11
Keywords nanoscale gaps
cathodes
single Cu emitter
sputter etching
low voltage field emission
turn-on voltage
field emission
single Cu nanowire
bias voltages
focused ion beam technology
vacuum electronics
nanoscale cathode-anode distances
focused ion beam etching
Cu
nanowires
emission current
copper
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Snippet Field emission applications to date including displays have featured electrode gaps in the micron scale or even larger. Devices such as vacuum field effect...
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SubjectTerms Anodes
bias voltages
Cathodes
copper
Emission analysis
emission current
Emitters
Field effect transistors
Field emission
focused ion beam etching
focused ion beam technology
Ion beams
Low voltage
low voltage field emission
nanoscale cathode‐anode distances
nanoscale gaps
Nanowires
Semiconductor devices
single Cu emitter
single Cu nanowire
Special Issue: Selected Papers from The 12th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2017)
sputter etching
turn‐on voltage
vacuum electronics
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Title Low voltage field emission of single Cu nanowire in air with nanoscale gaps for vacuum electronics
URI http://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0411
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Volume 12
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