A study on segregation layers of Bi4Si3O12 crystal grown by the Bridgman method

• Published in: Journal of crystal growth Vol. 377; pp. 160 - 163
• Main Authors: Xiong, Wei, Zhou, Yao, Guo, Feiyun, Chen, Liang, Luo, Caiyun, Yuan, Hui
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.08.2013; Elsevier
• Subjects: A1. Segregation; A2. Bridgman technique; A2. Single crystal growth; B1. Bismuth compounds; B2. Scintillator materials; Bridgman method; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal defects; Crystal growth; Crystals; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; Excitation spectra; Growth from melts; zone melting and refining; Luminescence; Materials science; Methods of crystal growth; physics of crystal growth; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physics; Segregations; Solid-solid transitions; Solubility, segregation, and mixing; phase separation; Specific phase transitions; Spectra; A2. Bridgman technique; A1. Segregation; B1. Bismuth compounds; A2. Single crystal growth; B2. Scintillator materials; Crystal growth; Segregation; Layered crystals; Crystallization; Luminescence; Photoluminescence; Silicates; Monocrystals; Morphology; Optical properties; Bismuth; Bismuth compounds; Absorption spectra; Bridgman method; Crystal growth from melts
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2013.04.047

Bismuth silicate (Bi4Si3O12, BSO) crystals including and excluding segregation layers have been grown by the Bridgman method. The morphology and composition of segregation layers existing in the defective crystal were investigated, and the crystallization habit of BSO crystal was discussed. In order to grow large size BSO crystals, several growth techniques were suggested to restrain the segregation layers. The optical properties including transmittance, photoluminescence, X-ray excited luminescence spectra and light yield of BSO crystal were also measured and discussed in this paper. •Transparent Bi4Si3O12 crystal with a size of Φ25×100mm3 was grown by the Bridgman method.•Segregation layers observed in Bi4Si3O12 crystal present the features of growth facets.•Segregation layers seriously decrease the scintillation properties of Bi4Si3O12 crystal.•Suitable growth directions and slight Bi-rich melt are helpful to reduce segregation layers.