AC floating body effects and the resultant analog circuit issues in submicron floating body and body-grounded SOI MOSFET's

We report the extensive study on ac floating body effects of different SOI MOSFET technologies. Besides the severe kink and resultant noise overshoot and degraded-distortion in partially depleted (PD) floating body SOI MOSFET's, we have investigated the residue ac floating body effects in fully...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on electron devices Vol. 46; no. 8; pp. 1685 - 1692
Main Authors Ying-Che Tseng, Huang, W.M., Monk, D.J., Welch, P., Ford, J.M., Woo, J.C.S.
Format Journal Article
LanguageEnglish
Published IEEE 01.08.1999
Subjects
Depletion
Deviation
Devices
Guidelines
Harmonic distortion
MOSFETs
Noise
Resultants
Online AccessGet full text

Cover

More Information
Summary:We report the extensive study on ac floating body effects of different SOI MOSFET technologies. Besides the severe kink and resultant noise overshoot and degraded-distortion in partially depleted (PD) floating body SOI MOSFET's, we have investigated the residue ac floating body effects in fully depleted (FD) floating body SOI MOSFET's, and the different body contacts on PD SOI technologies. It is important to note that there is a universal correlation between ac kink effect and Lorentzian-like noise overshoot regardless of whether the body is floating or grounded. In addition, it was found that third-order harmonic distortion is very sensitive to floating body induced kink or deviation on output conductance due to the finite voltage drop of body resistance. These results provide device design guidelines for SOI MOSFET technologies to achieve comparable low-frequency noise and linearity with Bulk MOSFET's.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.777157