Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy
Novel silicon photonics applications requiring heavy n-type doping have recently driven a great deal of interest towards the phosphorous doping of germanium. In this work we report on infrared reflectance spectroscopy measurements of the electron density in heavily n-type doped germanium layers obta...
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Published in | Journal of Optics Vol. 16; no. 9; pp. 94010 - 7 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.09.2014
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Subjects | |
Online Access | Get full text |
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Summary: | Novel silicon photonics applications requiring heavy n-type doping have recently driven a great deal of interest towards the phosphorous doping of germanium. In this work we report on infrared reflectance spectroscopy measurements of the electron density in heavily n-type doped germanium layers obtained by stacking multiple phosphorous -layers. Here, we demonstrate that the conventional Drude model of the electrodynamic response of free carriers in metals can be adapted to describe heavily doped semiconductor thin films. Consequently, the effect of the electron density on the plasma frequency, scattering rate and complex permittivity can be investigated. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 2040-8978 2040-8986 1464-4258 |
DOI: | 10.1088/2040-8978/16/9/094010 |