Punchthrough behavior in short channel NMOS and PMOS 6H-silicon carbide transistors at elevated temperatures

An experimental investigation of the effects of high temperature on short channel NMOS and PMOS transistors in 6H-SiC is reported. Punchthrough characteristics are presented and examined at room temperature and 300/spl deg/C. The punchthrough current increases dramatically for scaled PMOS transistor...

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Bibliographic Details
Published inIEEE transactions on components and packaging technologies Vol. 22; no. 3; pp. 433 - 438
Main Authors Man Pio Lam, Kornegay, K.T.
Format Journal Article
LanguageEnglish
Published IEEE 01.09.1999
Subjects
Carbides
Channels
CMOS technology
Doping
Electric variables
Frequency
High temperature
Implants
MOS devices
MOSFET circuits
Packaging
Power MOSFET
Semiconductor devices
Silicon carbide
Temperature dependence
Transistors
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Summary:An experimental investigation of the effects of high temperature on short channel NMOS and PMOS transistors in 6H-SiC is reported. Punchthrough characteristics are presented and examined at room temperature and 300/spl deg/C. The punchthrough current increases dramatically for scaled PMOS transistors at high temperature while the temperature dependence of electrical characteristics for short channel NMOS is small. The results presented in this paper also provide insight into design criteria for short channel silicon carbide (SiC) devices intended for operation at elevated temperatures.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1521-3331
1557-9972
DOI:10.1109/6144.796547