Selective Si Etching Using HCl Vapor

Selective Si etching using HCl in a reduced pressure chemical vapor deposition reactor in the temperature range 800-1000 degrees C is investigated. At 900 degrees C, the etch process is anisotropic, exhibiting the densely packed (100), (311) and (111) surfaces. This behavior indicates that the etch...

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Bibliographic Details
Published inPhysica scripta Vol. 2004; pp. 107 - 109
Main Authors Isheden, C, Hellström, P E, Radamson, H H, Zhang, S-L, Östling, M
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.01.2004
Subjects
Anisotropic etching
Atomic concentration
Chemical vapor deposition
Electrical engineering, electronics and photonics
Electronics
Elektronik
Elektroteknik, elektronik och fotonik
Hydrochloric acid
Masking oxide
Surface reactions
TECHNOLOGY
TEKNIKVETENSKAP
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Summary:Selective Si etching using HCl in a reduced pressure chemical vapor deposition reactor in the temperature range 800-1000 degrees C is investigated. At 900 degrees C, the etch process is anisotropic, exhibiting the densely packed (100), (311) and (111) surfaces. This behavior indicates that the etch process is limited by surface reaction, since the etch rate in the directions with higher atomic concentration is lower. When the temperature is decreased to 800 degrees C, etch pits occur. A more isotropic etch is obtained at 1000 degrees C, however at this temperature the masking oxide is attacked and the etch surface is rough. Thus the temperature has to be confined to a narrow window to yield desirable properties under the present process conditions.
ISSN:1402-4896
0031-8949
1402-4896
DOI:10.1088/0031-8949/2004/T114/026