Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism

• Published in: Microelectronics and reliability Vol. 52; no. 6; pp. 1227 - 1232
• Main Authors: Chen, Jianjun, Chen, Shuming, Liang, Bin, Liu, Biwei, Liu, Fanyu
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.06.2012; Elsevier
• Subjects: Applied sciences; Balancing; CMOS; Collection; Design. Technologies. Operation analysis. Testing; Electrical engineering. Electrical power engineering; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Integrated circuits; Inverters; Microelectronics; Power electronics, power supplies; Pulse width; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Simulation; Radiation resistance; Pulse width; Complementary MOS technology; PMOS technology; Power electronics; NMOS technology; Transistor inverter
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2011.12.002

The impact of the source on single event transient (SET) is studied for the balanced two-transistor inverter by a novel simulation structure in a 90nm twin-well bulk CMOS technology. Due to the significantly distinct mechanism of single event change collection in PMOS and NMOS, the source, which is beneficial to broadening P-hit SET pulse width (WSET) but reducing N-hit WSET, plays a different role in SET production. Based on these different source roles, different radiation hardened by design (RHBD) methods are proposed to reduce WSET for PMOS and NMOS, respectively. The simulation results show that the proposed RHBD methods can remarkably reduce WSET.