Advances in the development of an AlGaAs/GaAs cascade solar cell using a patterned germanium tunnel interconnect

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al 0.37Ga 0.63As top cell, the growth of the GaAs bottom cell over the patterned germanium tunne...

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Bibliographic Details
Published inSolar cells Vol. 30; no. 1; pp. 345 - 354
Main Authors Venkatasubramanian, R., Timmons, M.L., Colpitts, T.S., Hills, J.S.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Lausanne Elsevier B.V 1991
Elsevier Sequoia
Subjects
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
Solar cell
Congress
Gallium Arsenides
Aluminium Gallium Arsenides Mixed
Germanium
Microstructure
Electrical characteristic
Heterojunction
Cascade connection
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Summary:In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al 0.37Ga 0.63As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth of germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed.
ISSN:0379-6787
1878-2655
DOI:10.1016/0379-6787(91)90067-Y