Rapid crystallization of silicon films using pulsed current-induced joule heating

Crystallization of silicon films formed on glass substrates was achieved by rapid-joule heating of Cr strips adjacently formed via 200-nm-thick SiO 2 intermediate layers. 3-μs-pulsed voltages applied to the Cr strips caused a high joule heating intensity about 1×10 6 W/ cm 2 . Transmission electron...

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Bibliographic Details
Published inJournal of non-crystalline solids Vol. 299; pp. 746 - 750
Main Authors Sameshima, T, Kaneko, Y, Andoh, N
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.2002
Subjects
S180
61.16.Bg
C2863
61.50.−f
73.50.Gr
M140
72.20.−I
T200
73.20.Hb
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Summary:Crystallization of silicon films formed on glass substrates was achieved by rapid-joule heating of Cr strips adjacently formed via 200-nm-thick SiO 2 intermediate layers. 3-μs-pulsed voltages applied to the Cr strips caused a high joule heating intensity about 1×10 6 W/ cm 2 . Transmission electron microscopy measurements confirmed a crystalline grain size of 50–100 nm. 1-μm-long crystalline grain growth was observed just beneath of the edge of Cr strips. The activation of phosphorus atoms according to crystallization was also achieved.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(01)01109-7