Simulation of the Ising model, memory for Bell states and generation of four-atom entangled states in cavity QED

A scheme is proposed to simulate the Ising model and preserve the maximum entangled states (Bell states) in cavity quantum electrodynamics (QED) driven by a classical field with large detuning. In the strong driving and large-detuning regime, the effective Hamiltonian of the system is the same as th...

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Published inScience China. Physics, mechanics & astronomy Vol. 52; no. 5; pp. 700 - 707
Main Authors Zhang, YingJie, Xia, YunJie, Man, ZhongXiao, Guo, GuangCan
Format Journal Article
LanguageEnglish
Published Heidelberg SP Science in China Press 01.05.2009
Springer Nature B.V
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Summary:A scheme is proposed to simulate the Ising model and preserve the maximum entangled states (Bell states) in cavity quantum electrodynamics (QED) driven by a classical field with large detuning. In the strong driving and large-detuning regime, the effective Hamiltonian of the system is the same as the standard Ising model, and the scheme can also make the initial four Bell states of two atoms at the maximum entanglement all the time. So it is a simple memory for the maximal entangled states. The system is insensitive to the cavity decay and the thermal field and more immune to decoherence. These advantages can warrant the experimental feasibility of the current scheme. Furthermore, the genuine four-atom entanglement may be acquired via two Bell states through one-step implementation on four two-level atoms in the strong-driven model, and when two Greenberger-Horne-Zeilinger (GHZ) states are prepared in our scheme, the entangled cluster state may be acquired easily. The success probability for the scheme is 1.
Bibliography:ZHANG YingJie1, XIA YunJie1, MAN ZhongXiao1 & GUO GuangCan2 1 Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Department of Physics, Qufu Normal University, Qufu 273165, China; 2 Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
11-5000/N
ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1674-7348
1672-1799
1869-1927
1862-2844
DOI:10.1007/s11433-009-0099-9