Influence of annealing temperatures on solution-processed AlInZnO thin film transistors

• Published in: Journal of alloys and compounds Vol. 646; pp. 675 - 679
• Main Authors: Gao, Yana, Lu, Jianguo, Zhang, Jianhua, Li, Xifeng
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.10.2015
• Subjects: AIZO; Annealing temperature; Solution-processed; Thin film transistor; Annealing temperature; Thin film transistor; AIZO; Solution-processed
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2015.06.049

Thin film transistors (TFTs) using solution-processed aluminum indium zinc oxide (AIZO) as a channel layer were fabricated in this study. Influence of annealing temperatures on solution processed AIZO thin films surface, structural and chemical properties had been intensively investigated. The AIZO films existed in an amorphous phase even through the annealing temperature reach up to 500 °C. The as-prepared AIZO films with surface root-mean-square roughness values less than 0.6 nm were uniform and smooth. As the annealing temperatures exceeded 400 °C, the impurities and hydroxyl groups in the AIZO films had almost no change, demonstrating that the AIZO oxide formation was almost completed. Above all, the solution processed AIZO TFTs exhibit excellent device performance with high saturation mobility of 20.8 cm2/V s, threshold voltage of −0.39 V, small subthreshold swing of 0.13 V/dec and high on/off current ratio of 5 × 106. [Display omitted] •AIZO thin films and AIZO TFTs were prepared by solution-process in this research.•Their properties depended on annealing temperatures were analyzed systematically.•AIZO thin films oxidization behaviors were almost complete when annealed at 400 °C.•AIZO TFTs show high mobility (20.8 cm2/V s) and low subthreshold swing (0.13 V/dec).