Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth

• Published in: Journal of crystal growth Vol. 354; no. 1; pp. 101 - 108
• Main Authors: Liu, Xin, Liu, Lijun, Li, Zaoyang, Wang, Yuan
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2012; Elsevier
• Subjects: A1. Computer simulation; A1. Convection; A1. Impurities; A1. Interfaces; A2. Magnetic field assisted Czochralski method; Computational fluid dynamics; Convection; Cross-disciplinary physics: materials science; rheology; Crystal growth; Crystals; Exact sciences and technology; Growth from melts; zone melting and refining; Magnetic fields; Materials science; Melts; Methods of crystal growth; physics of crystal growth; Physics; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Transport; Turbulence; A1. Computer simulation; A1. Impurities; A1. Interfaces; A1. Convection; A2. Magnetic field assisted Czochralski method; Digital simulation; Growth interface; Crucibles; Czochralski method; Computerized simulation; Dissolution; Growth mechanism; Silicon; Growth from melt; Crystal growth from melts
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2012.06.004

To clarify the effects of cusp-shaped magnetic field (CMF) on turbulent convection and oxygen transport in the melt, a set of 2D global simulations were conducted for growth of a 300mm Czochralski-Si crystal. Turbulent melt convection was handled by a modified low-Re k–ε turbulence model with additional magnetohydrodynamic (MHD) terms. Three configurations of CMF were numerically compared. Different types of melt convection and growth interface geometry emerged as CMF configuration and magnetic field strength were varied. CMF configuration was found to be crucial in reducing oxygen dissolution from the crucible wall and oxygen incorporation into the crystal. The results demonstrated that the growth interface shape and the oxygen concentration at the growth interface can be controlled effectively by applying the appropriate CMF. ► Global simulations are conducted for a 300mm MCZ-Si crystal growth. ► Additional MHD terms are introduced to the turbulence model. ► CMF configurations affect the melt convection and oxygen transport. ► Adjusting the symmetry plane of CMF to get more favorable growth interface.