Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

• Published in: Journal of crystal growth Vol. 396; pp. 66 - 70
• Main Authors: Yurasov, D.V., Drozdov, M.N., Zakharov, N.D., Novikov, A.V.
• Format: Journal Article
• Language: English; Russian
• Published: Amsterdam Elsevier B.V 15.06.2014; Elsevier
• Subjects: A1. Doping; A1. Segregation; A3. Molecular beam epitaxy; Antimony; B1. Germanium silicon alloys; Crystal growth; Heterostructures; Molecular beam epitaxy; Molecular structure; Segregations; Silicon germanides; Strain; A1. Segregation; A1. Doping; A3. Molecular beam epitaxy; B1. Germanium silicon alloys
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2014.03.042

In the present work features of antimony (Sb) segregation in SiGe heterostructures grown by molecular beam epitaxy are investigated. Dependences of the segregation strength on growth temperature, composition and elastic strains are obtained. It is shown that growth conditions and parameters of the structure exert an interrelated impact on the impurity segregation: the influence of the structure parameters depends on growth temperature. Moreover, the alloy composition is found to be a much more significant factor than the elastic strains in SiGe layers. Obtained dependences of Sb segregation on growth conditions and structure parameters were used for formation of selectively doped SiGe heterostructures. •Sb segregation in SiGe layers with different Ge content and strain state was studied.•Segregation in SiGe is higher than in Si.•Ge composition is a more significant factor than strain.•Impacts of Ge content and elastic strain on segregation are temperature dependent.•Abrupt doping profiles in SiGe layers with 5–6nm/decade slope were obtained.