Design optimization of SiGe BiCMOS Silicon Controlled Rectifier for Charged Device Model (CDM) protection applications

• Published in: Microelectronics and reliability Vol. 54; no. 1; pp. 57 - 63
• Main Authors: Cui, Qiang, Parthasarathy, Srivatsan, Salcedo, Javier A., Liou, Juin J., Hajjar, Jean J., (Paul) Zhou, Yuanzhong
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.01.2014; Elsevier
• Subjects: Applied sciences; Charging; Computer simulation; Design optimization; Devices; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Electrostatic discharges; Exact sciences and technology; Optimization; Silicon controlled rectifiers; Silicon germanides; Semiconductor alloys; Transient response; Circuit design; Ge-Si alloys; Electrostatic discharge; Protective device; Charged device model; Controlled rectifier; Optimization; Optimal design; BiCMOS technology; Transmission line; Silicon rectifier; Computer aided design; Binary alloy
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2013.09.021

•We optimized the SCRs in SiGe/BiCMOS process for Charged Device Model ESD.•We provided the TCAD simulation method for CDM ESD protection.•We investigated the SCRs by using very fast Transmission Line Pulse. Silicon Controlled Rectifier (SCR) devices fabricated in a SiGe BiCMOS technology are optimized for Charged Device Model (CDM) Electrostatic Discharge (ESD) protection. This optimization involves combined experimental and Technology Computer Aided Design (TCAD) ESD simulation analysis of the quasi-static current–voltage and transient response characteristics during fast stress conditions. The underlying physical mechanisms critical to the device design are demonstrated based on very fast transmission line pulsing (VFTLP) measurement and physics-based simulation results.