Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

No reliable results were reported up-to-date on electrical activation of Mg implanted GaN without co-doping with other ions. The main reason of the poor ion-implanted activation in GaN is lack of the adequate GaN annealing technique. We have developed a new approach, Multicycle Rapid Thermal Anneali...

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Published inJournal of crystal growth Vol. 350; no. 1; pp. 21 - 26
Main Authors Feigelson, B.N., Anderson, T.J., Abraham, M., Freitas, J.A., Hite, J.K., Eddy, C.R., Kub, F.J.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.07.2012
Elsevier
Subjects
A3. Chemical vapor deposition processes
B1. GaN
B1. Nitrides
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
B1. Nitrides
A3. Chemical vapor deposition processes
B1. GaN
CVD
Rapid thermal annealing
Doping
P type conductivity
Gallium nitride
III-V compound
III-V semiconductors
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Summary:No reliable results were reported up-to-date on electrical activation of Mg implanted GaN without co-doping with other ions. The main reason of the poor ion-implanted activation in GaN is lack of the adequate GaN annealing technique. We have developed a new approach, Multicycle Rapid Thermal Annealing to overcome this limitation and enable longer annealing times at high temperature. We have applied this new technique to Mg-implanted GaN, and demonstrated p-type conductivity.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2011.12.016