Electrical properties of porphyrin-based switching devices

Molecular switching devices were reported utilizing Langmuir–Blodgett (LB) monolayer films containing the 5,10,15,20-Tetrakis-Octadecyloxymethylphenyl-Porphyrin-Zn(II) as a redox-active component. From current–voltage ( I– V) characteristics, it was found that the devices exhibit outstanding switchi...

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Bibliographic Details
Published inThin solid films Vol. 438; pp. 123 - 127
Main Authors Koo, Ja-Ryong, Lee, Ho-Sik, Ha, Yunkyoung, Choi, Yoon-Hwa, Kim, Young Kwan
Format Journal Article
LanguageEnglish
Published Elsevier B.V 22.08.2003
Subjects
Langmuir–Blodgett (LB) film
Molecular-scale memory
Redox-active molecule
Switching device
Tunneling diode
Langmuir–Blodgett (LB) film
Redox-active molecule
Tunneling diode
Switching device
Molecular-scale memory
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Summary:Molecular switching devices were reported utilizing Langmuir–Blodgett (LB) monolayer films containing the 5,10,15,20-Tetrakis-Octadecyloxymethylphenyl-Porphyrin-Zn(II) as a redox-active component. From current–voltage ( I– V) characteristics, it was found that the devices exhibit outstanding switching diode and tunneling diode behavior at room temperature, which seems to be due to the asymmetric device structure. These electrical properties of the devices may be applicable to active components for the memory and/or logic circuits in the future.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(03)00807-1