p-type non-polar m-plane ZnO films grown by plasma-assisted molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 331; no. 1; pp. 15 - 17
• Main Authors: Ding, P., Pan, X.H., Huang, J.Y., He, H.P., Lu, B., Zhang, H.H., Ye, Z.Z.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.09.2011; Elsevier
• Subjects: A1. Characterization; A1. p-type conduction; A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting materials; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electrical resistivity; Elongation; Emission; Epitaxial growth; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films; Zinc oxide; A1. p-type conduction; B2. Semiconducting materials; A3. Molecular beam epitaxy; A1. Characterization; B1. Zinc compounds; Electrical conductivity; Semiconductor materials; Hall mobility; Doping; Photoluminescence; Plasma assisted processing; XRD; Thin films; Zinc compounds; Anisotropy; Morphology; Molecular beam epitaxy; Zinc oxide; P type conductivity; Deep energy levels; Deep level
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2011.07.004

Non-polar ZnO thin films were grown epitaxially on m-plane sapphire substrates using plasma-assisted molecular beam epitaxy. The film is (1 0 1¯ 0) oriented ( m-plane) as identified by the X-ray diffraction pattern. The surface of ZnO film shows highly anisotropic morphology with stripes elongated along the c-axis. The nonintentionally doped non-polar ZnO film was grown under oxygen-rich condition, which exhibits weak p-type conductivity with a hole concentration of 1.3×10 16 cm −3, a Hall mobility of 0.314 cm 2 V −1 s −1, and a resistivity of 1536 Ω cm. Room-temperature photoluminescence of the p-type non-polar ZnO shows a strong UV emission at ∼3.307 eV and negligible deep level emission. ► Non-polar m-plane ZnO films were grown on m-plane sapphire substrates using PAMBE. ► ZnO film shows highly anisotropic morphology with stripes elongated along c-axis. ► Nonintentionally doped non-polar ZnO film exhibits weak p-type conductivity. ► Room-temperature PL shows strong NBE emission and negligible deep level emission.