Vapor‐phase growth of high‐quality wafer‐scale two‐dimensional materials

• Published in: InfoMat Vol. 1; no. 4; pp. 460 - 478
• Main Authors: Tong, Xin, Liu, Keli, Zeng, Mengqi, Fu, Lei
• Format: Journal Article
• Language: English
• Published: Melbourne John Wiley & Sons, Inc 01.12.2019; Wiley
• Subjects: two‐dimensional materials; vapor‐phase growth; wafer scale
• ISSN: 2567-3165; 2567-3165
• DOI: 10.1002/inf2.12038

Emerging two‐dimensional (2D) materials have stimulated tremendous scientific and industrial interests due to their diverse and tunable physical, chemical, and mechanical properties. The scalable production of high‐quality wafer‐scale 2D materials has become significantly essential to bring us closer to practical industrial applications, particularly in electronic devices. Vapor‐phase growth provides attractive opportunities for the synthesis of large‐area and high‐quality 2D materials. In this review, we will emphasize vapor‐phase growth strategies from three aspects, including suppressing nucleation, seamless stitching, and evolutionary selection growth. We discuss the general understanding of the related fundamental mechanism and specific parameter optimization from precursors and substrate design to the adjusting of growth parameters (temperature and pressure). Meanwhile, we present other strategies to produce various kinds of wafer‐scale 2D materials. Finally, we conclude the current challenges and future directions in this developing field. This work may inspire researchers to better design routes in the synthesis of wafer‐scale 2D materials with high quality. High‐quality wafer‐scale two‐dimensional materials are important in the practical applications, especially in electronics devices. This review systematically summarizes the key strategies in the vapor‐phase growth of high‐quality wafer‐scale two‐dimensional materials. The current challenges and opportunities are discussed to help guide the future research.