Growth of silicon carbide: process-related defects

• Published in: Applied surface science Vol. 184; no. 1; pp. 27 - 36
• Main Authors: Yakimova, R., Syväjarvi, M., Iakimov, T., Jacobsson, H., Kakanakova-Georgieva, A., Råback, P., Janzén, E.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 12.12.2001; Elsevier Science
• Subjects: 4H–SiC; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Grown-in defects; LPE; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Morphological defects; Physics; PVT growth; LPE; PVT growth; Morphological defects; 4H–SiC; Grown-in defects; Crystal growth; Atomic force microscopy; Scanning electron microscopy; Crystal defects; Semiconductor thin films; Physical vapor deposition; Silicon carbides; Crystal nucleation; Wide band gap semiconductors; Surface topography; Surface structure
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(01)00472-X

This paper reviews the present understanding of defect formation and development in relation to process conditions in 4H–SiC crystal growth and epitaxy. The polytype uniformity during seeded sublimation growth of SiC boules has been discussed. Insight into different structural imperfections has been attempted. The role of the temperature distribution, as well as of the quality of seed/crystal interface in the occurrence of grown-in defects has been demonstrated. Micropipe termination by liquid-phase deposition along with defect evolution in subsequently grown layers due to rough interface has been addressed. Finally, a relation between extended morphological defects in thick (50–100 μm) 4H–SiC epitaxial layers and local stress in the material has been suggested. Optimised growth conditions to reduce the overall defect density have been proposed.