Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE

• Published in: Journal of crystal growth Vol. 248; pp. 431 - 436
• Main Authors: Baskar, K., Sundgren, P., Douheret, O., Landgren, G.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.2003; Elsevier
• Subjects: A1. Atomic force microscopy; A1. Photoluminescence; A1. Surface structure; A3. MOVPE; atomic force rnicroscopy; B2. III–V semiconductors; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; III-V semiconductors; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOVPE; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Solid surfaces and solid-solid interfaces; surface structure; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); temperature; Vapor phase epitaxy; growth from vapor phase; 61.16.C; A1. Atomic force microscopy; 78.55.E; B2. III–V semiconductors; 65.35.B; A1. Surface structure; 81.15.Gh; A3. MOVPE; 81.05.Ea; A1. Photoluminescence; Atomic force microscopy; Gallium arsenides; Inorganic compounds; Localized states; Photoluminescence; Surfaces; Crystal growth from vapors; Surface structure; 81.05.Ea Al. Atomic force microscopy; Thin films; Nitrides; Gallium Arsenides nitrides; B2. III-V semiconductors; Arsenides; Buffer layer; Epitaxial layers; Quantum wells; Al. Photoluminescence; Experimental study; Indium Arsenides nitrides; Morphology; MOVPE method; Arsenides nitrides; III-V semiconductors
• ISSN: 0022-0248; 1873-5002; 1873-5002
• DOI: 10.1016/S0022-0248(02)01936-X

GaInNAs/GaAs single quantum wells (QWs) have been grown by metalorganic vapour phase epitaxy (MOVPE). The surface morphology has been studied by atomic force microscopy (AFM). The density of pits observed on the surface of QW structures was found to depend on the growth temperature and dimethylhydrazine (DMHy) flow. Cross-sectional AFM image showed the presence of defects at the interface of GaInNAs/GaAs. The low temperature photoluminescence characteristics of the QWs as a function of growth temperature, DMHy flow and density of surface pits have been discussed. The origin of pit formation is addressed based on the pyrolysis products present during the growth of QWs. The results suggest that higher growth temperature maybe desirable to obtain good quality GaInNAs QWs.