High-voltage SPM oxidation of ZrN: materials for multiscale applications

• Published in: Nanotechnology Vol. 16; no. 2; pp. 262 - 266
• Main Authors: Farkas, N, Comer, J R, Zhang, G, Evans, E A, Ramsier, R D, Dagata, J A
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 01.02.2005
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/16/2/014

Scanning probe microscope (SPM) oxidation was used to form zirconium oxide features on 200 nm thick ZrN films. The features exhibit rapid yet controlled growth kinetics, even in contact mode with 70 V dc applied between the probe tip and substrate. The features grown for times longer than 10 s are higher than 200 nm, and reach more than 1000 nm in height after 300 s. Long-time oxidation experiments and selective etching of the oxides and nitrides lead us to propose that as the oxidation reaches the silicon substrate, delamination occurs with the simultaneous formation of a thin layer of new material at the ZrN/Si interface. High-voltage oxide growth on ZrN is fast and sustainable, and the robust oxide features are promising candidates for multiscale (nanometre-to-micrometre) applications.