Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)

• Published in: Journal of crystal growth Vol. 323; no. 1; pp. 144 - 149
• Main Authors: Fissel, A., Krügener, J., Osten, H.J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.05.2011; Elsevier
• Subjects: A1. Nucleation; A1. Reflection high-energy electron diffraction surface defects; A1. Surface processes; A1. Ultraviolet photoelectron spectroscopy; A3. Molecular beam epitaxy; Annealing; B2. Semiconducting silicon; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Diffusion; interface formation; Epitaxial growth; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beams; Molecular, atomic, ion, and chemical beam epitaxy; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Physics; Segregations; Silicon; Solid surfaces and solid-solid interfaces; Structure of solids and liquids; crystallography; Surface chemistry; Surface defects; Surface structure; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; A1. Reflection high-energy electron diffraction surface defects; A1. Surface processes; A1. Nucleation; A3. Molecular beam epitaxy; A1. Ultraviolet photoelectron spectroscopy; B2. Semiconducting silicon; Nucleation; Surface segregation; RHEED; Surface structure; Boron; Molecular beam epitaxy; Ultraviolet photoelectron spectra; Silicon; Diffusion; Crystal structure; Crystal defects; Annealing; Semiconductor materials; Adsorption; Surface defect; Superstructure; Monolayers; Growth mechanism; Crystal faces
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.12.001

Creating rotation twins periodically in a defined distance within Si layers could lead to the formation of miscellaneous Si crystal structures. This could be realized by several growth and annealing cycles on heavily B-covered Si(111) exhibiting (√3×√3)R30° surface superstructure. However, surface defects due to imperfections of the B-induced surface structure give rise to an inhomogeneous Si nucleation, which limits the structure size. Therefore, surface structure formation induced by both adsorption and surface segregation of B on Si(111) and its influence on the Si molecular beam epitaxial growth mode has been investigated using ultraviolet photoelectron spectroscopy and accompanying reflection high-energy electron diffraction. Based on these studies, conditions have been established to prevent surface defects. Furthermore, annealing samples with 0.6 monolayers (ML) B buried below several ML Si at 1080K results in a renewal of the B-induced Si surface structure without any defects. This indicates a dominance of B surface segregation over bulk diffusion, which becomes significant only above 1100K.