Cratering response method to study the effect of ultrasonic energy on Cu-wire bonding quality

• Published in: Microelectronics and reliability Vol. 51; no. 9-11; pp. 1865 - 1868
• Main Authors: Rongen, R.T.H., van IJzerloo, A., Cotofana, C., Lan, K.M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Kidlington Elsevier Ltd 01.09.2011; Elsevier
• Subjects: AGING MECHANISMS; Amplifiers; Applied sciences; Assembly; Bond energy; BONDING; Circuit properties; Copper; CRATERS; Design. Technologies. Operation analysis. Testing; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Integrated circuits; Monitors; Packages; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Ultrasonic testing; ULTRASONICS; WIRE; Thermal ageing; High temperature; Audio-frequency amplifiers; Implementation; Integrated circuit bonding; Upper bound; Monitor; Acoustic wave amplifier; Wire bonding; Interconnection; Surface mount technology; Electronic packaging; Integrated circuit; Copper; Ultrasound
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2011.07.041

The paper presents a method for 50μm Cu-wire bonding to study sub-percentage assembly yield loss due to cratering, so called “in-process” cratering. Test vehicle is an audio amplifier device assembled in a surface mount power package (HSOP). The method is based on high temperature aging followed by wire pull testing and has successfully been applied to determine the upper limit of the bond energy process window. After implementation in production, the shift to lower bond energy was controlled via regular ball shear production monitor and “in-process” cratering was no longer observed.