Modeling and Application of Multi-Port TSV Networks in 3-D IC

Through-silicon-via (TSV) enables vertical connectivity between stacked chips or interposer and is a key technology for 3-D integrated circuits (ICs). While arrays of TSVs are needed in 3-D IC, there only exists a frequency-dependent resistance, inductance, conductance and capacitance circuit model...

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Bibliographic Details
Published inIEEE transactions on computer-aided design of integrated circuits and systems Vol. 32; no. 4; pp. 487 - 496
Main Authors Wei Yao, Siming Pan, Achkir, B., Jun Fan, Lei He
Format Journal Article
LanguageEnglish
Published IEEE 01.04.2013
Subjects
3-D integration
Capacitance
conductance and capacitance (RLGC) matrices
crosstalk
Impedance
Inductance
Integrated circuit modeling
modeling
packaging
power delivery
resistance
Silicon
Solid modeling
through-silicon via (TSV)
Through-silicon vias
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Summary:Through-silicon-via (TSV) enables vertical connectivity between stacked chips or interposer and is a key technology for 3-D integrated circuits (ICs). While arrays of TSVs are needed in 3-D IC, there only exists a frequency-dependent resistance, inductance, conductance and capacitance circuit model for a pair of TSVs with coupling between them. In this paper, we develop a simple yet accurate circuit model for a multiport TSV network (e.g., coupled TSV array) by decomposing the network into a number of TSV pairs and then applying circuit models for each of them. We call the new model a pair-based model for the multiport TSV network. It is first verified against a commercial electromagnetic solver for up to 20 GHz and subsequently employed for a variety of examples for signal and power integrity analysis.
ISSN:0278-0070
1937-4151
DOI:10.1109/TCAD.2012.2228740