Enhanced modulation bandwidth in injection-locked semiconductor lasers

Optical probing of an injection-locked semiconductor laser is used to show significant improvement in the intrinsic broad-band modulation characteristics relative to the free-running case. The regenerative amplification spectra of a weak optical probe in the injection-locked laser are in good agreem...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 9; no. 10; pp. 1322 - 1324
Main Authors Simpson, T.B., Liu, J.M.
Format Journal Article
LanguageEnglish
Published IEEE 01.10.1997
Subjects
Bandwidth
Frequency
Laser modes
Laser tuning
Nonlinear optics
Optical modulation
Optical saturation
Probes
Semiconductor lasers
Stimulated emission
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Summary:Optical probing of an injection-locked semiconductor laser is used to show significant improvement in the intrinsic broad-band modulation characteristics relative to the free-running case. The regenerative amplification spectra of a weak optical probe in the injection-locked laser are in good agreement with the predictions of a conventional coupled-equation model. Based on the regenerative amplification spectra, the intrinsic modulation characteristic due to a weak injection current modulation can be calculated. It shows approximately a factor of three enhancement of the modulation bandwidth, beyond the K-factor limit of the free-running laser.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.623250