InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime

• Published in: Journal of crystal growth Vol. 317; no. 1; pp. 39 - 42
• Main Authors: Hospodková, A., Pangrác, J., Vyskočil, J., Oswald, J., Vetushka, A., Caha, O., Hazdra, P., Kuldová, K., Hulicius, E.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.02.2011; Elsevier
• Subjects: A1. Low dimensional structures; A1. Photoluminescence; A3. InAs/GaAs quantum dots; A3. Low-pressure metalorganic vapor phase epitaxy; B2. Semiconducting III–V materials; Capping; Cross-disciplinary physics: materials science; rheology; Crystal growth; Dissolution; Exact sciences and technology; Gallium arsenide; Gallium arsenides; Indium arsenides; Indium gallium arsenides; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Nanoscale materials and structures: fabrication and characterization; Other topics in nanoscale materials and structures; Photoluminescence; Physics; Quantum dots; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Vapor phase epitaxy; growth from vapor phase; A3. InAs/GaAs quantum dots; A3. Low-pressure metalorganic vapor phase epitaxy; A1. Low dimensional structures; B2. Semiconducting III–V materials; A1. Photoluminescence; Gallium arsenides; Growth rate; Quantum dots; Photoluminescence; VPE; Dissolution; Layer thickness; Indium arsenides; III-V compound; B2. Semiconducting III-V materials; Operating conditions; Partial pressure; MOVPE method; Low pressure; Growth mechanism; Nanostructured materials; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.12.076

InAs/GaAs quantum dot (QD) properties can be significantly influenced by the growth conditions of the QD capping layer. We have studied the effect of a group III partial pressure in the reactor on the QD capping process and on the QD photoluminescence when the capping layer is grown under the kinetically limited regime. Two types of capping layers were prepared: GaAs and InGaAs. The GaAs capping layer growth rate decrease did not influence QD dissolution, but increased the dissolution of big hillocks. Influence of the GaAs capping layer thickness on QD photoluminescence is also demonstrated. The composition of the ternary strain reducing InGaAs capping layer can be considerably changed depending on the V/III ratio under kinetically limited growth.