Current Kink and Capacitance Frequency Dispersion in Silicon PIN Photodiodes

Silicon PIN photodiodes in the visible wavelength range have been widely applied in aerospace, defense, security, medical, and scientific instruments because of their high sensitivity and low cost. In this paper, the phenomena of the current kink and the capacitance frequency dispersion are observed...

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Bibliographic Details
Published inIEEE journal of the Electron Devices Society Vol. 5; no. 5; pp. 390 - 394
Main Authors Guo, Xia, Feng, Yajie, Liu, Qiaoli, Wang, Huaqiang, Li, Chong, Hu, Zonghai, He, Xiaoying
Format Journal Article
LanguageEnglish
Published IEEE 01.09.2017
Subjects
Capacitance
capacitance frequency dispersion
current kink
Frequency measurement
Leakage currents
Photodiodes
Silicon
Silicon PIN photodiodes
Temperature measurement
trap-assisted tunneling
Tunneling
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Summary:Silicon PIN photodiodes in the visible wavelength range have been widely applied in aerospace, defense, security, medical, and scientific instruments because of their high sensitivity and low cost. In this paper, the phenomena of the current kink and the capacitance frequency dispersion are observed. Contamination at the p-type Ohmic contact interface is proposed to explain the current kink effect and capacitance frequency dispersion, according to the temperature-dependent I-V measurement results in which trap-assisted tunneling process demonstrated.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2017.2720754