Microdisk lasers based on GaInNAsSb GaAsN quantum well active region

Microdisk lasers based on novel InGaAsNSb GaAsN quantum well active region are developed and studied under optical pumping. Room temperature lasing at 1.55 μm in 2.3 μm in diameter microdisks with InGaAsNSb GaAsN QW is demonstrated.

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 643; no. 1; pp. 12040 - 12043
Main Authors Moiseev, E I, Kryzhanovskaya, N V, Kudashova, Yu V, Maximov, M V, Kulagina, M M, Troshkov, S I, Lipovskii, A A, Korpijärvi, V-M, Karjalainen, H, Niemi, T, Guina, M, Zhukov, A E
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 02.11.2015
Subjects
Active regions (lasers)
Lasers
Optical pumping
Physics
Quantum wells
Room temperature
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Summary:Microdisk lasers based on novel InGaAsNSb GaAsN quantum well active region are developed and studied under optical pumping. Room temperature lasing at 1.55 μm in 2.3 μm in diameter microdisks with InGaAsNSb GaAsN QW is demonstrated.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/643/1/012040