InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer
For the fabrication of InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) showing large area emission, transparent Al-doped ZnO (AZO) films grown by atomic layer deposition at relatively low temperatures were introduced as current spreading layers. These AZO films with an Al con...
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Published in | Journal of crystal growth Vol. 326; no. 1; pp. 147 - 151 |
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Main Authors | , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.07.2011
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | For the fabrication of InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) showing large area emission, transparent Al-doped ZnO (AZO) films grown by atomic layer deposition at relatively low temperatures were introduced as current spreading layers. These AZO films with an Al content of 3
at% showed a low electrical resistivity of <10
−3–10
−4
Ω
cm, a high carrier concentration of >10
20
cm
−3, and an excellent optical transmittance of ∼85%, in spite of the low growth temperature. The deposition of the AZO film induced an intense blue emission from the whole surface of the
p-GaN and weak ultraviolet emission from the n-AZO and p-GaN junction. At an injection current of 50
mA, the output powers of the blue LEDs were 1760 and 1440
mcd for the samples with AZO thicknesses of 100 and 300
nm, respectively. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2011.01.085 |