Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

• Published in: Journal of crystal growth Vol. 315; no. 1; pp. 110 - 113
• Main Authors: Hospodková, A., Pangrác, J., Oswald, J., Hazdra, P., Kuldová, K., Vyskočil, J., Hulicius, E.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.01.2011; Elsevier
• Subjects: A1. Electroluminescence; A1. Low dimensional structures; A1. Photoluminescence; A3. InAs/GaAs quantum dots; A3. Low-pressure metalorganic vapor phase epitaxy; B2. Semiconducting III–V materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electric fields; Electric potential; Electroluminescence; Exact sciences and technology; Gallium arsenide; Gallium arsenides; Indium arsenides; Indium gallium arsenides; Materials science; Maxima; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other luminescence and radiative recombination; Other semiconductors; Photoluminescence; Physics; Specific materials; Strain; Wavelengths; A1. Electroluminescence; A3. InAs/GaAs quantum dots; A3. Low-pressure metalorganic vapor phase epitaxy; A1. Low dimensional structures; B2. Semiconducting III–V materials; A1. Photoluminescence; Gallium arsenides; Confinement; B2. Semiconducting III―V materials; Quantum dots; Doping; Luminescence; Photoluminescence; Electroluminescence; VPE; Indium arsenides; III-V compound; Electric field effects; MOVPE method; Optical properties; Low pressure; Strained layer; Heterojunctions; Nanostructured materials; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.09.041

We present a comparison of photo- (PL) and electro-luminescence (EL) spectra of quantum dot (QD) structures with different strain reducing layers (SRL). Simple QD structures without SRL have negligible difference between the PL and EL maxima, which are near 1250 nm. InGaAs and GaAsSb SRLs were used to shift the luminescence maximum towards telecommunication wavelengths at 1.3 or 1.55 μm. We have found that MOVPE prepared QD structures with SRL exhibit an EL maximum at a considerably shorter wavelength than the PL maximum measured on similar samples without doping in the absence of built-in electric field. A mechanism to explain this phenomenon is proposed for both types of SRLs. The GaAsSb SRL is more suitable for long wavelength EL due to the higher confinement potential of electrons compared to InGaAs SRL. EL maximum at 1300 nm and PL maximum at 1520 nm were achieved on InAs QD structures with GaAs 0.87Sb 0.13 SRL (type I heterojunction).