Electrical properties of top-gate oxide thin-film transistors with double-channel layers

• Published in: Journal of crystal growth Vol. 326; no. 1; pp. 186 - 190
• Main Authors: Cheong, Woo-Seok, Mook Chung, Sung, Shin, Jae-Hun, Hwang, Chi-Sun
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2011; Elsevier
• Subjects: A1. ZnO; A3. thin-film transistor; Applied sciences; B1. electrical stability; B1. IGZO; B2. double channel layers; B2. oxide semiconductor; Channels; Drains; Electrical properties; Electronics; Exact sciences and technology; Oxides; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Thin films; Transistors; B2. double channel layers; A3. thin-film transistor; A1. ZnO; B1. electrical stability; B2. oxide semiconductor; B1. IGZO; Gallium; Heat treatment; Semiconductor materials; Electrical properties; Channel structure; Gallium oxide; Lead sulfide; Indium oxide; Lamellar structure; Gate oxide; Gallium tellurides; Drain current; Stress effects; Zinc oxide; Gallium Indium Zinc Oxides Mixed; Thin film transistor; Gates
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2011.01.094

Using ZnO, and three compositional In 2O 3-Ga 2O 3-ZnO (IGZO, In:Ga:Zn=1:1:1, 2:1:2, 2:2:1, atomic ratio) semiconductors, we have made and evaluated several double layered oxide thin-film transistors (TFTs). The drain current was mainly affected by the nearer channel material to a gate insulator. From the positive bias stress (PBS) tests, however, the electrical stability showed a complicated result, depending on both channel structures and post-heat treatments.