Effects of rf-Bias on Properties of Sputtered Silicon Films

Amorphous silicon films were prepared by rf-bias sputtering with a magnetron target and the effects of substrate bias on the electrical and optical properties of sputtered films were studied. Moderate substrate bias was found to improve film quality: photoconductivity increased to ∼2×10 -4 \mho/cm a...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 20; no. 7; p. L485
Main Authors Suzuki, Masakuni, Maekawa, Toshikazu, Okano, Shuichi, Bandow, Tsutomu
Format Journal Article
LanguageEnglish
Published 01.01.1981
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Summary:Amorphous silicon films were prepared by rf-bias sputtering with a magnetron target and the effects of substrate bias on the electrical and optical properties of sputtered films were studied. Moderate substrate bias was found to improve film quality: photoconductivity increased to ∼2×10 -4 \mho/cm and the spin density decreased to ∼4×10 17 cm -3 for the biased samples. The results are interpreted in terms of the removal of loosely bound materials from the surface by ion-bombardment. Low voltage sputtering due to the magnetron target in high argon pressure would also play some roles in the improvement of film quality.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.20.L485