On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

• Published in: Solid-state electronics Vol. 170; p. 107820
• Main Authors: Ghibaudo, G., Aouad, M., Casse, M., Martinie, S., Poiroux, T., Balestra, F.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2020; Elsevier
• Subjects: Cryogenic temperature; Engineering Sciences; Micro and nanotechnologies; Microelectronics; MOSFET; Subthreshold swing; Model; MOSFET; Cryogenic temperature; Subthreshold swing

•Comprehensive analysis of MOSFET subthreshold swing at cryogenic temperature.•Compact analytical expression for the subthreshold swing as a function of temperature.•Generalized subthreshold swing formulation with conductivity function within Kubo-Greenwood formalism. A comprehensive analysis of the...