On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

•Comprehensive analysis of MOSFET subthreshold swing at cryogenic temperature.•Compact analytical expression for the subthreshold swing as a function of temperature.•Generalized subthreshold swing formulation with conductivity function within Kubo-Greenwood formalism. A comprehensive analysis of the...

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Bibliographic Details
Published inSolid-state electronics Vol. 170; p. 107820
Main Authors Ghibaudo, G., Aouad, M., Casse, M., Martinie, S., Poiroux, T., Balestra, F.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.08.2020
Elsevier
Subjects
Cryogenic temperature
Engineering Sciences
Micro and nanotechnologies
Microelectronics
MOSFET
Subthreshold swing
Model
MOSFET
Cryogenic temperature
Subthreshold swing
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Summary:•Comprehensive analysis of MOSFET subthreshold swing at cryogenic temperature.•Compact analytical expression for the subthreshold swing as a function of temperature.•Generalized subthreshold swing formulation with conductivity function within Kubo-Greenwood formalism. A comprehensive analysis of the MOSFET subthreshold swing for a 2D subband with exponential band tail of states is first proposed. Then, a compact analytical expression for the subthreshold swing as a function of temperature is derived, well accounting for both its cryogenic temperature saturation and classical higher temperature increase. Moreover, a generalized subthreshold swing calculation applicable to the situation where the MOSFET drain current should be evaluated from the conductivity function within the Kubo-Greenwood formalism is developed.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2020.107820