On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature
•Comprehensive analysis of MOSFET subthreshold swing at cryogenic temperature.•Compact analytical expression for the subthreshold swing as a function of temperature.•Generalized subthreshold swing formulation with conductivity function within Kubo-Greenwood formalism. A comprehensive analysis of the...
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| Published in | Solid-state electronics Vol. 170; p. 107820 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
01.08.2020
Elsevier |
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| Abstract | •Comprehensive analysis of MOSFET subthreshold swing at cryogenic temperature.•Compact analytical expression for the subthreshold swing as a function of temperature.•Generalized subthreshold swing formulation with conductivity function within Kubo-Greenwood formalism.
A comprehensive analysis of the MOSFET subthreshold swing for a 2D subband with exponential band tail of states is first proposed. Then, a compact analytical expression for the subthreshold swing as a function of temperature is derived, well accounting for both its cryogenic temperature saturation and classical higher temperature increase. Moreover, a generalized subthreshold swing calculation applicable to the situation where the MOSFET drain current should be evaluated from the conductivity function within the Kubo-Greenwood formalism is developed. |
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| AbstractList | •Comprehensive analysis of MOSFET subthreshold swing at cryogenic temperature.•Compact analytical expression for the subthreshold swing as a function of temperature.•Generalized subthreshold swing formulation with conductivity function within Kubo-Greenwood formalism.
A comprehensive analysis of the MOSFET subthreshold swing for a 2D subband with exponential band tail of states is first proposed. Then, a compact analytical expression for the subthreshold swing as a function of temperature is derived, well accounting for both its cryogenic temperature saturation and classical higher temperature increase. Moreover, a generalized subthreshold swing calculation applicable to the situation where the MOSFET drain current should be evaluated from the conductivity function within the Kubo-Greenwood formalism is developed. |
| ArticleNumber | 107820 |
| Author | Martinie, S. Aouad, M. Poiroux, T. Balestra, F. Ghibaudo, G. Casse, M. |
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| Title | On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature |
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