Nanostructure formation on silicon surfaces by using low energy helium plasma exposure

A new technology for obtaining nanostructure on silicon surface for potential applications to optical devices is represented. Scanning electron microscope analysis indicated a grown nanostructure of dense forest consisting of long cylindrical needle cones with a length of approximately 300 nm and a...

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Published inJapanese Journal of Applied Physics Vol. 55; no. 12; pp. 120301 - 120304
Main Authors Takamura, Shuichi, Kikuchi, Yusuke, Yamada, Kohei, Maenaka, Shiro, Fujita, Kazunobu, Uesugi, Yoshihiko
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.12.2016
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Summary:A new technology for obtaining nanostructure on silicon surface for potential applications to optical devices is represented. Scanning electron microscope analysis indicated a grown nanostructure of dense forest consisting of long cylindrical needle cones with a length of approximately 300 nm and a mutual distance of approximately 200 nm. Raman spectroscopy and spectrophotometry showed a good crystallinity and photon trapping, and reduced light reflectance after helium plasma exposure. The present technique consists of a simple maskless process that circumvents the use of chemical etching liquid, and utilizes soft ion bombardment on silicon substrate, keeping a good crystallinity.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.120301