Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD

Aluminum-free buried-heterostructure quantum-well lasers have been successfully fabricated on low-composition InGaAs substrates. Selective-area metalorganic chemical vapor deposition (MOCVD) was utilized to investigate a variety of InGaAs quantum wells with a wide range of composition and thickness....

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 10; no. 4; pp. 489 - 491
Main Authors Jones, A.M., Coleman, J.J., Lent, B., Moore, A.H., Bonner, W.A.
Format Journal Article
LanguageEnglish
Published IEEE 01.04.1998
Subjects
Chemical lasers
Chemical vapor deposition
Diode lasers
Gallium arsenide
Indium gallium arsenide
MOCVD
Potential well
Quantum well lasers
Substrates
Temperature
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Summary:Aluminum-free buried-heterostructure quantum-well lasers have been successfully fabricated on low-composition InGaAs substrates. Selective-area metalorganic chemical vapor deposition (MOCVD) was utilized to investigate a variety of InGaAs quantum wells with a wide range of composition and thickness. Compressively strained quantum wells can be deposited thicker on substrates of InGaAs than GaAs before the generation of misfit dislocations. These deeper potential wells enable laser diodes with longer wavelengths (1.1504 μm) than GaAs-based emitters and higher characteristic temperatures (145 K) than InP-based devices.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.662570