Increasing of AlGaAs GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers

• Published in: Journal of physics. Conference series Vol. 643; no. 1; pp. 12085 - 12088
• Main Authors: Solovev, I A, Davydov, V G, Kapitonov, Yu V, Shapochkin, P Yu, Efimov, Yu P, Lovcjus, V A, Eliseev, S A, Petrov, V V, Ovsyankin, V V
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 02.11.2015
• Subjects: Aluminum gallium arsenides; Excitation; Excitons; Gallium arsenide; Physics; Quantum wells; Resonance; Robustness

The robustness of AlGaAs GaAs quantum well to strong resonant excitation is studied. It was found that lowering Al concentration in barriers to 3% does not influence the measured radiative linewidth of exciton resonance in the sample at low intensities. At the same time parasitic broadening of the r...