Increasing of AlGaAs GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers

The robustness of AlGaAs GaAs quantum well to strong resonant excitation is studied. It was found that lowering Al concentration in barriers to 3% does not influence the measured radiative linewidth of exciton resonance in the sample at low intensities. At the same time parasitic broadening of the r...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 643; no. 1; pp. 12085 - 12088
Main Authors Solovev, I A, Davydov, V G, Kapitonov, Yu V, Shapochkin, P Yu, Efimov, Yu P, Lovcjus, V A, Eliseev, S A, Petrov, V V, Ovsyankin, V V
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 02.11.2015
Subjects
Aluminum gallium arsenides
Excitation
Excitons
Gallium arsenide
Physics
Quantum wells
Resonance
Robustness
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Summary:The robustness of AlGaAs GaAs quantum well to strong resonant excitation is studied. It was found that lowering Al concentration in barriers to 3% does not influence the measured radiative linewidth of exciton resonance in the sample at low intensities. At the same time parasitic broadening of the resonance by an additional resonant illumination is strongly suppressed as compared to the quantum well with 30% of Al in barriers.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/643/1/012085